Investigation of magnetic and electronic coupling between two (Ga,Mn)As layers in (Ga,Mn)As∕GaAs∕(Ga,Mn)As magnetic tunnel junctions
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2799238
Reference25 articles.
1. Ferromagnetism and high Curie temperature in semiconductor heterostructures with Mn δ-doped GaAs andp-type selective doping
2. Ferromagnetic semiconductors: moving beyond (Ga,Mn)As
3. Magnetization-Switched Metal-Insulator Transition in a (Ga,Mn)As Tunnel Device
4. Exchange biasing of the ferromagnetic semiconductor (Ga,Mn)As by MnO (invited)
5. Magnetization reversal in(Ga,Mn)As∕MnOexchange-biased structures: Investigation by planar Hall effect
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3. Magnetization reversal in trilayer structures consisting of GaMnAs layers with opposite signs of anisotropic magnetoresistance;Scientific Reports;2018-02-02
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5. First-principles studies of interlayer exchange coupling in (Ga, Mn)N-based diluted magnetic semiconductor multilayers;Optik;2015-05
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