Magnetization-Switched Metal-Insulator Transition in a (Ga,Mn)As Tunnel Device-Reference-Cited by-同舟云学术

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Magnetization-Switched Metal-Insulator Transition in a (Ga,Mn)As Tunnel Device

Published:2006-11-01 Issue:18 Volume:97 Page:
ISSN:0031-9007
Container-title:Physical Review Letters
language:en
Short-container-title:Phys. Rev. Lett.

Author:

Pappert K.,Schmidt M. J.,Hümpfner S.,Rüster C.,Schott G. M.,Brunner K.,Gould C.,Schmidt G.,Molenkamp L. W.

Publisher

American Physical Society (APS)

Subject

General Physics and Astronomy

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.97.186402/fulltext

Reference18 articles.

1. Coulomb gap and low temperature conductivity of disordered systems

2. Electronic Properties of Doped Semiconductors

3. Direct Observation of the Coulomb Correlation Gap in a Nonmetallic Semiconductor, Si: B

4. Coulomb gap in a doped semiconductor near the metal-insulator transition: Tunneling experiment and scaling ansatz

5. Coulomb Gap: How a Metal Film Becomes an Insulator

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