All-Silicon Switchable Magnetoelectric Effect through Interlayer Exchange Coupling-Reference-Cited by-同舟云学术

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All-Silicon Switchable Magnetoelectric Effect through Interlayer Exchange Coupling

Published:2017-05-29 Issue:14 Volume:18 Page:1916-1920
ISSN:1439-4235
Container-title:ChemPhysChem
language:en
Short-container-title:ChemPhysChem

Author:

Liu Hang¹²,Sun Jia-Tao¹,Fu Hui-xia¹,Sun Pei-jie¹,Feng Y. P.³,Meng Sheng¹⁴²

Affiliation:

1. Beijing National Laboratory for Condensed Matter Physics and Institute of Physics; Chinese Academy of Sciences; Beijing 100190 China

2. University of Chinese Academy of Sciences; Beijing 100049 China

3. Department of Physics; National University of Singapore; Singapore 117542 Singapore

4. Collaborative innovation center of quantum matter; Beijing 100190 China

Funder

National Basic Research Program of China

National Natural Science Foundation of China

Strategic Priority Research Program B of Chinese Academy of Sciences

NSAF

Publisher

Wiley

Subject

Physical and Theoretical Chemistry,Atomic and Molecular Physics, and Optics

Reference30 articles.

1. Controlling Ferromagnetic Easy Axis in a LayeredMoS2Single Crystal

2. Vacancy-Induced Ferromagnetism of MoS2 Nanosheets

3. Atomic-scale control of graphene magnetism by using hydrogen atoms

4. Multiferroicity: the coupling between magnetic and polarization orders

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Screening Magnetic Two-Dimensional Atomic Crystals with Nontrivial Electronic Topology;The Journal of Physical Chemistry Letters;2018-11-07

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