Single-step rapid trench filling with poly-Si using concentration dependence of deposition rate under a SiHCl<sub>3</sub>–H<sub>2</sub> system-Reference-Cited by-同舟云学术

Single-step rapid trench filling with poly-Si using concentration dependence of deposition rate under a SiHCl₃–H₂ system

Published:2022-03-01 Issue:3 Volume:12 Page:035323
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Yamamoto Takanori¹^ORCID,Nakashima Kenji¹,Kamijo Takuma²

Affiliation:

1. Toyota Central R&D Labs., Inc., 41-1 Yokomichi, Nagakute, Aichi 480-1192, Japan

2. Denso Corporation, 1-1 Showa-cho, Kariya, Aichi 448-8661, Japan

Abstract

A single-step rapid trench filling with poly-Si was demonstrated using SiHCl3, which advantageously has a high decomposition temperature and contains an etching gas. Through elementary reaction rate analysis, we found a unique condition in which the film deposition rate decreased as the source concentration increased. This negative correlation between the concentration and deposition rate is referred to in this study as NCCR. Through cross-sectional observation, we confirmed that under the NCCR condition, the trench was filled without clogging at a rate that was 60 times faster than conventional low-pressure chemical vapor deposition.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0083114

Reference11 articles.

1. A Novel T-Shaped Shallow Trench Isolation Technology

2. A new technique for producing large-area as-deposited zero-stress LPCVD polysilicon films: the MultiPoly process

3. Structure and Properties of LPCVD Silicon Films

4. Surface Treatment Effect on the Grain Size and Surface Roughness of as‐Deposited LPCVD Polysilicon Films

5. Sequential deposition of SiO2 and poly‐Si in isolation trenches