Sequential deposition of SiO2 and poly‐Si in isolation trenches
Author:
Publisher
American Vacuum Society
Subject
Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Link
http://avs.scitation.org/doi/pdf/10.1116/1.578325
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1. Single-step rapid trench filling with poly-Si using concentration dependence of deposition rate under a SiHCl3–H2 system;AIP Advances;2022-03-01
2. Deposited poly-Si as on-demand linewidth compensator for on-chip Fabry–Perot interferometer and vertical linear variable optical filter bandpass and passband manipulation;Journal of Micromechanics and Microengineering;2019-02-18
3. Simulation of the influence of via sidewall tapering on step coverage of sputter-deposited barrier layers;Microelectronic Engineering;2002-10
4. Feature scale transport and reaction during low-pressure deposition processes;Thin Films;1996
5. Conformality and Composition of Films Deposited at Low Pressures;MRS Proceedings;1995
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