Properties of InGaN quantum-well heterostructures grown on sapphire by metalorganic chemical vapor deposition
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.119959
Reference11 articles.
1. Widegap Column‐ III Nitride Semiconductors for UV/Blue Light Emitting Devices
2. High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well Structures
3. InGaN-Based Multi-Quantum-Well-Structure Laser Diodes
4. Photoluminescence of InGaN films grown at high temperature by metalorganic vapor phase epitaxy
5. Si-Doped InGaN Films Grown on GaN Films
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