Band engineering of GaN/AlN quantum wells by Si dopants
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4868580
Reference21 articles.
1. Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes
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3. High transconductance-normally-off GaN MODFETs
4. The Roles of Structural Imperfections in InGaN-Based Blue Light-Emitting Diodes and Laser Diodes
5. Room‐temperature continuous‐wave operation of InGaN multi‐quantum‐well structure laser diodes
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1. Multiple fields manipulation on nitride material structures in ultraviolet light-emitting diodes;Light: Science & Applications;2021-06-16
2. Intersubband transitions in GaN-based heterostructures;Mid-infrared Optoelectronics;2020
3. Experimental and theoretical analysis of influence of barrier composition on optical properties of GaN/AlGaN multi-quantum wells: Temperature- and pressure-dependent photoluminescence studies;Journal of Alloys and Compounds;2018-11
4. Intersubband Optoelectronics Using III-Nitride Semiconductors;Handbook of GaN Semiconductor Materials and Devices;2017-10-13
5. First-principles calculation of doped GaN/AlN superlattices;Acta Physica Sinica;2015
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