Experimental and theoretical analysis of influence of barrier composition on optical properties of GaN/AlGaN multi-quantum wells: Temperature- and pressure-dependent photoluminescence studies

Author:

Koronski Kamil,Strak Pawel,Wierzbicka Aleksandra,Grzanka Ewa,Borysiuk Jolanta,Sobczak Kamil,Jakiela RafalORCID,Sobanska Marta,Klosek Kamil,Monroy Eva,Zytkiewicz Zbigniew R.,Krukowski StanislawORCID,Kaminska AgataORCID

Funder

European Union within the European Regional Development Fund

Innovative Economy

Polish National Science Centre

Polish National Centre for Research and Development

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials

Reference52 articles.

1. Temperature dependence of interband transitions in GaN grown by metalorganic chemical vapor deposition;Shan;Appl. Phys. Lett.,1995

2. Recombination of free and bound excitons in GaN;Monemar;Phys. Status Solidi B,2008

3. AlN bandgap temperature dependence from its optical properties;Silveira;J. Cryst. Growth,2008

4. Advances of AlGaN-based high-efficiency deep-UV LEDs;Hirayama;Proc. SPIE,2011

5. III-nitride UV emitters and their applications;Khan,2010

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