Author:
Schmid F.,Laube M.,Pensl G.,Wagner G.,Maier M.
Subject
General Physics and Astronomy
Cited by
58 articles.
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1. Formation of ohmic contacts on heavily Al+-implanted p-type SiC without an alloying process;Japanese Journal of Applied Physics;2024-05-01
2. Study of Dopant Activation and Ionization for Phosphorus in 4H-SiC;Journal of Electronic Materials;2024-03-10
3. Selective Generation of V2 Silicon Vacancy Centers in 4H-Silicon Carbide;Nano Letters;2024-02-13
4. Low to Medium Dose Room and Elevated Temperature Implants in 4H-SiC Devices;2023 20th China International Forum on Solid State Lighting & 2023 9th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS);2023-11-27
5. Excimer laser doping for the fabrication of 4H-SiC power devices;Laser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XXVIII;2023-03-17