Study of Dopant Activation and Ionization for Phosphorus in 4H-SiC
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Publisher
Springer Science and Business Media LLC
Link
https://link.springer.com/content/pdf/10.1007/s11664-024-10976-3.pdf
Reference13 articles.
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2. J. Pernot, W. Zawadzki, S. Contreras, J.L. Robert, E. Neyret, and L. Di Cioccio, Electrical transport in n-type 4H silicon carbide. J. Appl. Phys. 90, 1869 (2001).
3. M.A. Capano, J.A. Cooper Jr., M.R. Melloch, A. Saxler, and W.C. Mitchel, Ionization energies and electron mobilities in phosphorus- and nitrogen-implanted 4H-silicon carbide. J. Appl. Phys. 87, 8773 (2000).
4. C. Darmody and N. Goldsman, Incomplete ionization in aluminum-doped 4H-silicon carbide. J. Appl. Phys. 126, 145701 (2019).
5. F. Schmid and G. Pensl, Comparison of the electrical activation of P+ and N+ ions co-implanted along with Si+ or C+ ions into 4H-SiC. Appl. Phys. Lett. 84, 3064 (2004).
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