Ionization energies and electron mobilities in phosphorus- and nitrogen-implanted 4H-silicon carbide
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.373609
Reference10 articles.
1. Surface roughening in ion implanted 4H-silicon carbide
2. Doping of SiC by Implantation of Boron and Aluminum
3. The effects of N+ dose in implantation into 6h-sic epilayers
4. Nitrogen Ion Implantation into α-SiC Epitaxial Layers
5. Nitrogen donors in 4H‐silicon carbide
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