The effects of interdiffusion on the subbands in GaxIn1−xN0.04As0.96/GaAs quantum well for 1.3 and 1.55 μm operation wavelengths
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1370110
Reference34 articles.
1. Self-assembled GaInNAs quantum dots for 1.3 and 1.55 μm emission on GaAs
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3. Organometallic vapor phase epitaxy growth and optical characteristics of almost 1.2 μm GaInNAs three-quantum-well laser diodes
4. Annealing behavior of p-type Ga0.892In0.108NxAs1−x (0⩽X⩽0.024) grown by gas-source molecular beam epitaxy
5. Observation of quantum dot-like behavior of GaInNAs in GaInNAs/GaAs quantum wells
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