Organometallic vapor phase epitaxy growth and optical characteristics of almost 1.2 μm GaInNAs three-quantum-well laser diodes
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.124593
Reference12 articles.
1. GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance
2. GaInNAs-GaAs long-wavelength vertical-cavity surface-emitting laser diodes
3. Investigations of (GaIn)(NAs) bulk layers and (GaIn)(NAs)/GaAs multiple quantum well structures grown using tertiarybutylarsine (TBAs) and 1,1-dimethylhydrazine (UDMHy)
4. Room-temperature pulsed operation of strained GaInNAs/GaAs double quantum well laser diode grown by metal organic chemical vapour deposition
5. Metalorganic chemical vapor deposition of GaInNAs lattice matched to GaAs for long-wavelength laser diodes
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1. Group III Nitrides;Springer Handbook of Electronic and Photonic Materials;2017
2. Precursors to Semiconducting Materials;Comprehensive Organometallic Chemistry III;2007
3. Study of interdiffusion in GaInNAs∕GaAs quantum well structure emitting at 1.3μm by eight-band k∙p method;Journal of Applied Physics;2005-05-15
4. Photoluminescence of metalorganic-chemical-vapor-deposition-grown GaInNAs/GaAs single quantum wells;Applied Physics Letters;2003-01-27
5. Photoreflectance and surface photovoltage spectroscopy characterisation of an InGaP∕InGaAsN∕GaAs NpN DHBT structure;IEE Proceedings - Optoelectronics;2003
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