Van der Waals epitaxy of two-dimensional single-layer h-BN on graphite by molecular beam epitaxy: Electronic properties and band structure-Reference-Cited by-同舟云学术

Van der Waals epitaxy of two-dimensional single-layer h-BN on graphite by molecular beam epitaxy: Electronic properties and band structure

Published:2018-06-18 Issue:25 Volume:112 Page:253102
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Pierucci Debora¹,Zribi Jihene²,Henck Hugo²,Chaste Julien²,Silly Mathieu G.³,Bertran François³^ORCID,Le Fevre Patrick³,Gil Bernard⁴⁵,Summerfield Alex⁶,Beton Peter H.⁶,Novikov Sergei V.⁶^ORCID,Cassabois Guillaume⁴,Rault Julien E.³,Ouerghi Abdelkarim²

Affiliation:

1. CELLS-ALBA Synchrotron Radiation Facility, Carrer de la Llum 2-26, 08290 Cerdanyola del Valles, Barcelona, Spain

2. Centre de Nanosciences et de Nanotechnologies, CNRS, University Paris-Sud, Université Paris-Saclay, C2N–Marcoussis, 91460 Marcoussis, France

3. Synchrotron-SOLEIL, Saint-Aubin, BP48, F91192 Gif sur Yvette Cedex, France

4. Laboratoire Charles Coulomb UMR 5221, Université de Montpellier and CNRS, F-34095 Montpellier, France

5. Ioffe Institute, St. Petersburg 194021, Russia

6. School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD, United Kingdom

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5029220

Reference50 articles.

1. Direct-bandgap properties and evidence for ultraviolet lasing of hexagonal boron nitride single crystal

2. Large-Scale Synthesis of High-Quality Hexagonal Boron Nitride Nanosheets for Large-Area Graphene Electronics

3. Exciton energy-momentum map of hexagonal boron nitride

4. Photoinduced doping in heterostructures of graphene and boron nitride

5. Excitons in boron nitride single layer

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