Effect of strain on electronic properties of tri-layer MoS2/h-BN/graphene van der Waals heterostructures-Reference-Cited by-同舟云学术

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Effect of strain on electronic properties of tri-layer MoS2/h-BN/graphene van der Waals heterostructures

Published:2024-02 Issue: Volume:185 Page:111776
ISSN:0022-3697
Container-title:Journal of Physics and Chemistry of Solids
language:en
Short-container-title:Journal of Physics and Chemistry of Solids

Author:

Kanwal Arooba,Jalil Abdul^ORCID,Raza Raza Ali,Ahmed Sarfraz,Zhao Tingkai,Hassan Ather,Ilyas Syed Zafar

Publisher

Elsevier BV

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Reference78 articles.

1. Advances in 2D Materials for Electronic Devices;Nichols,2016

2. Van der Waals heterostructures;Geim;Nature,2013

3. Physics of Semiconductors and Their Heterostructures, Electrical Engineering Series;Singh,1993

4. Light-emitting diodes by band-structure engineering in van der Waals heterostructures;Withers;Nat. Mater.,2015

5. Van der Waals heterostructures: stacked 2D materials shed light;Wang;Nat. Mater.,2015

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Computational Insights into Schottky Barrier Heights: Graphene and Borophene Interfaces with H- and H́-XSi₂N₄ (X = Mo, W) Monolayers;Langmuir;2024-04-09

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