Surface morphology evolution in highly mismatched Sb-graded buffer layers on GaAs
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1366361
Reference22 articles.
1. Dislocation density reduction through annihilation in lattice‐mismatched semiconductors grown by molecular‐beam epitaxy
2. Strain relief study concerning the InxGa1−xAs/GaAs (0.07
3. Relaxed InxGa1−xAs graded buffers grown with organometallic vapor phase epitaxy on GaAs
4. Multiple dislocation loops in linearly graded InxGa1−xAs (0≤x≤0.53) on GaAs and InxGa1−xP (0≤x≤0.32) on GaP
5. Step-graded buffer layer study of the strain relaxation by transmission electron microscopy
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1. Improved performances of 2. 6 mu m In0.83Ga0.17 As/InP photodetectors on digitally-graded metamorphic pseudo-substrates;J INFRARED MILLIM W;2019
2. A versatile digitally-graded buffer structure for metamorphic device applications;Journal of Physics D: Applied Physics;2018-03-16
3. High Hole Mobility of GaSb Relaxed Epilayer Grown on GaAs Substrate by MOCVD through Interfacial Misfit Dislocations Array;Journal of Materials Science & Technology;2012-02
4. A strain relief mode at interface of GaSb/GaAs grown by metalorganic chemical vapor deposition;Applied Physics Letters;2011-11-28
5. Compositionally-graded InGaAs–InGaP alloys and GaAsSb alloys for metamorphic InP on GaAs;Journal of Crystal Growth;2011-06
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