Strain-doping coupling dynamics in phosphorus doped Si:C formed by solid phase epitaxial regrowth
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3497195
Reference12 articles.
1. Silicon-Carbon Formed Using Cluster-Carbon Implant and Laser-Induced Epitaxy for Application as Source/Drain Stressors in Strained n-Channel MOSFETs
2. Carbon incorporation into Si at high concentrations by ion implantation and solid phase epitaxy
3. Substitutional versus interstitial carbon incorporation during pseudomorphic growth of Si1−yCyon Si(001)
4. Substitutional carbon incorporation in epitaxial Si1−yCy layers grown by chemical vapor deposition
5. On the influence of elastic strain on the accommodation of carbon atoms into substitutional sites in strained Si:C layers grown on Si substrates
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1. Structural Reconstruction of Reduced Graphene;The Journal of Physical Chemistry C;2018-06-23
2. Study of phosphorus doped Si:C films formed by in situ doped Si epitaxy and implantation process for n-type metal-oxide-semiconductor devices;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2017-03
3. Revisiting the role of strain in solid-phase epitaxial regrowth of ion-implanted silicon;Applied Physics Express;2015-01-28
4. On the doping limit for strain stability retention in phosphorus doped Si:C;Journal of Applied Physics;2014-07-21
5. Formation of Si:CP layer through in-situ doping and implantation process for n-type metal–oxide–semiconductor devices;Thin Solid Films;2014-04
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