Towards high frequency heterojunction transistors: Electrical characterization of N-doped amorphous silicon-graphene diodes
Author:
Affiliation:
1. Technische Universität Dresden, Semiconductor and Microsystems Technology Laboratory, 01062 Dresden, Germany
2. IHP GmbH, Leibniz-Institut für innovative Mikroelektronik, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany
Funder
German research foundation
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4987147
Reference39 articles.
1. Graphene-On-Silicon Schottky Junction Solar Cells
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5. Plasma-enhanced chemical vapor deposition of amorphous Si on graphene
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