MOVPE SiGeSn development for the next generation four junction solar cells

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Timò Gianluca,Abagnale Giovanni,Armani Nicola,Calicchio Marco,Schineller Bernd

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Reference18 articles.

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3. Wafer bonded four-junction GaInP/GaAs//GaInAsP/GaInAs concentrator solar cells with 44.7% efficiency

4. R. R. King et al., “Band-Gap-Engineered Architectures for High-Efficiency Multijunction Concentrator Solar Cells Acknowledgments,” 24th Eur. Photovolt. Sol. Energy Conf. 21-25 Sept. 2009, Hamburg, Ger., pp. 55–61, 2009.

5. S. R. Kurtz, D. Myers, and J. M. Olson, “Projected performance of three-and four-junction devices using GaAs and GaInP,” in Conference Record of the IEEE Photovoltaic Specialists Conference, 1997, pp. 875–878.

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