Attainment of low interfacial trap density absent of a large midgap peak in In0.2Ga0.8As by Ga2O3(Gd2O3) passivation-Reference-Cited by-同舟云学术

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Attainment of low interfacial trap density absent of a large midgap peak in In0.2Ga0.8As by Ga2O3(Gd2O3) passivation

Published:2011-02-07 Issue:6 Volume:98 Page:062108
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Lin C. A.,Chiu H. C.,Chiang T. H.,Lin T. D.,Chang Y. H.,Chang W. H.,Chang Y. C.,Wang W.-E.,Dekoster J.,Hoffmann T. Y.,Hong M.,Kwo J.

Funder

National Science Council Taiwan

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3554375

Reference21 articles.

1. High-Performance Inversion-Type Enhancement-Mode InGaAs MOSFET With Maximum Drain Current Exceeding 1 A/mm

2. III–V Metal–Oxide–Semiconductor Field-Effect Transistors with High κ Dielectrics

3. A high performance In0.53Ga0.47As metal-oxide-semiconductor field effect transistor with silicon interface passivation layer

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3. Low interfacial trap density and high-temperature thermal stability in atomic layer deposited single crystal Y2O3/n-GaAs(001);Applied Physics Express;2016-07-13

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5. Electrical properties of GaAs metal–oxide–semiconductor structure comprising Al2O3 gate oxide and AlN passivation layer fabricated in situ using a metal–organic vapor deposition/atomic layer deposition hybrid system;AIP Advances;2015-08

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