Reconstruction at the interface of one cycle of trimethylaluminum and water on GaAs(111)A-2×2 from atomic layer deposition
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/8/i=12/a=126602/pdf
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1. InGaAs Metal Oxide Semiconductor Devices with Ga2O3(Gd2O3) High-κ Dielectrics for Science and Technology beyond Si CMOS
2. Realization of high-quality HfO2 on In0.53Ga0.47As by in-situ atomic-layer-deposition
3. Submicrometer Inversion-Type Enhancement-Mode InGaAs MOSFET With Atomic-Layer-Deposited $\hbox{Al}_{2}\hbox{O}_{3}$ as Gate Dielectric
4. Considerations for Ultimate CMOS Scaling
5. III–V compound semiconductor transistors—from planar to nanowire structures
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