Gate tunable graphene-silicon Ohmic/Schottky contacts-Reference-Cited by-同舟云学术

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Gate tunable graphene-silicon Ohmic/Schottky contacts

Published:2012-11-26 Issue:22 Volume:101 Page:223113
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Chen Chun-Chung,Chang Chia-Chi,Li Zhen,Levi A. F. J.,Cronin Stephen B.

Funder

U.S. Department of Energy

Office of Naval Research

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4768921

Reference29 articles.

1. Work Function Engineering of Graphene Electrode via Chemical Doping

2. Controlling Electron-Phonon Interactions in Graphene at Ultrahigh Carrier Densities

3. Multiband transport in bilayer graphene at high carrier densities

4. Graphene transport at high carrier densities using a polymer electrolyte gate

5. Observation of an Electric-Field-Induced Band Gap in Bilayer Graphene by Infrared Spectroscopy

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