Focused ion beam assisted prototyping of graphene/ZnO devices on Zn-polar and O-polar faces of ZnO bulk crystals

Author:

Tiagulskyi StanislavORCID,Yatskiv Roman,Faitová Hana,Černohorský Ondřej,Vaniš Jan,Grym JanORCID

Funder

Grantová agentura České republiky

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference41 articles.

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2. Gate tunable graphene-silicon Ohmic/Schottky contacts;Chen;Appl. Phys. Lett.,2012

3. Graphene barristor, a triode device with a gate-controlled Schottky barrier;Yang;Science,2012

4. Tuning Schottky diodes at the many-layer-graphene/semiconductor interface by doping;Tongay;Carbon,2011

5. The interaction of light and graphene: basics, devices, and applications;Xia;Proc. IEEE,2013

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