Hydrogen passivation of Zn acceptors in InGaAs during reactive ion etching
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.102739
Reference7 articles.
1. Study of the atomic models of three donor‐like traps on oxidized silicon with aluminum gate from their processing dependences
2. Hydrogen passivation of shallow-acceptor impurities inp-type GaAs
3. Passivation of zinc acceptors in InP by atomic hydrogen coming from arsine during metalorganic vapor phase epitaxy
4. Activation of Zn and Cd acceptors in InP grown by metalorganic vapor phase epitaxy
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3. Damage in III/V semiconductors caused by hard- and soft-etching plasmas;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2001-05
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