Damage in III/V semiconductors caused by hard- and soft-etching plasmas-Reference-Cited by-同舟云学术

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Damage in III/V semiconductors caused by hard- and soft-etching plasmas

Published:2001-05 Issue:3 Volume:19 Page:762-772
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Franz Gerhard

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.1355760

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4. Advanced and reliable GaAs/AlGaAs ICP-DRIE etching for optoelectronic, microelectronic and microsystem applications;Microelectronic Engineering;2018-12

5. Correlation of III/V semiconductor etch results with physical parameters of high-density reactive plasmas excited by electron cyclotron resonance;Plasma Science and Technology;2017-10-24

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