Governing parameter for electromigration damage in the polycrystalline line covered with a passivation layer
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1432120
Reference23 articles.
1. Atomistic and computer modeling of metallization failure of integrated circuits by electromigration
2. Computer simulation of electromigration in thin‐film metal conductors
3. Electromigration failure modes in aluminum metallization for semiconductor devices
4. A New Approach to Calculate Atomic Flux Divergence by Electromigration
5. Microscopic and Mesoscopic Evaluations of Materials. Experimental Verification of a Governing Parameter of Electromigration Damage in Metal Lines of Electronic Packages.
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1. Strategy against electromigration-induced stress by passivation thickness design;Thin Solid Films;2023-11
2. Electromigration-Driven Crystallinity Design of Metallic Nanowire;Journal of the Society of Materials Science, Japan;2022-09-15
3. Experimental evaluation of threshold current density for electromigration damage in Al interconnect line with reservoir and sink structure;Mechanical Engineering Letters;2022
4. Computational evaluation of optimal reservoir and sink lengths for threshold current density of electromigration damage considering void and hillock formation;Microelectronics Reliability;2021-03
5. Anode-Side Failure of a Cuprous Oxide Semiconductor Caused by High-Density Current Loading;Journal of Electronic Materials;2019-08-22
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