Origin of multiple peak photoluminescence in InGaN/GaN multiple quantum wells
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1287124
Reference14 articles.
1. High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well Structures
2. InGaN-Based Multi-Quantum-Well-Structure Laser Diodes
3. Intra- and interwell transitions in GaInN/GaN multiple quantum wells with built-in piezoelectric fields
4. Recombination dynamics of localized excitons inIn0.20Ga0.80N-In0.05Ga0.95N multiple quantum wells
5. Structural origin of V-defects and correlation with localized excitonic centers in InGaN/GaN multiple quantum wells
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