New electron irradiation induced electron trap in epitaxially grown Si‐doped n‐GaAs-Reference-Cited by-同舟云学术

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New electron irradiation induced electron trap in epitaxially grown Si‐doped n‐GaAs

Published:1995-11-27 Issue:22 Volume:67 Page:3277-3279
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Auret F. Danie,Goodman Stewart A.,Meyer Walter E.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.115219

Reference16 articles.

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The fine structure of electron irradiation induced EL2-like defects inn-GaAs;Journal of Applied Physics;2016-04-14

2. In situ resistivity studies of 200MeV 107Ag14+-ion irradiated n-GaAs epitaxial layers;Vacuum;2002-02

3. Experimental investigation of 200 MeV 107Ag14+ ion induced modifications in n-GaAs epitaxial layer by in situ resistivity and Hall measurements;Materials Science and Engineering: B;2001-10

4. Deep levels in He++ irradiated Be-doped Al0.5Ga0.5As MBE layers;Physica B: Condensed Matter;1999-12

5. Thermally stimulated currents in semi-insulating GaAs Schottky diodes and their simulation;Applied Physics A: Materials Science & Processing;1999-10-01

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