In situ resistivity studies of 200MeV 107Ag14+-ion irradiated n-GaAs epitaxial layers
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation
Reference22 articles.
1. Irradiation-induced defects in GaAs
2. Behavior of electron-irradiation-induced defects in GaAs
3. New electron irradiation induced electron trap in epitaxially grown Si‐doped n‐GaAs
4. Comparison between deep level defects in GaAs induced by gamma, 1 MeV electron, and neutron irradiation
5. Variation of deep electron traps created by γ irradiation of GaAs
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