Nanoscale field-effect transistors: An ultimate size analysis
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.120473
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1. A room-temperature silicon single-electron metal–oxide–semiconductor memory with nanoscale floating-gate and ultranarrow channel
2. Monte Carlo simulations of p- and n-channel dual-gate Si MOSFET's at the limits of scaling
3. Space‐charge‐limited current and capacitance in double‐junction diodes
4. Electronic properties of two-dimensional systems
5. Double-gate silicon-on-insulator transistor with volume inversion: A new device with greatly enhanced performance
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