Rectifying Performance Induced by B/P, B/As, and B/Sb Co-doped Armchair Graphene Nanoribbons P-N Junction: A DFT Investigation-Reference-Cited by-同舟云学术

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Rectifying Performance Induced by B/P, B/As, and B/Sb Co-doped Armchair Graphene Nanoribbons P-N Junction: A DFT Investigation

Published:2022-08 Issue: Volume:78 Page:13-26
ISSN:0577-9073
Container-title:Chinese Journal of Physics
language:en
Short-container-title:Chinese Journal of Physics

Author:

Jiang Zhenhong,Miao Rui,Wen Ruolan,Liang YuJian,Wang Lei,Deng JinGui,Zhang Jian,Shao Qingyi^ORCID

Publisher

Elsevier BV

Subject

General Physics and Astronomy

Reference75 articles.

1. Nanoscale field-effect transistors: an ultimate size analysis;Pikus;Appl. Phys. Lett.,1997

2. Nanomaterials in transistors: from high-performance to thin-film applications;Franklin;Science,2015

3. Graphene Transistors: status, prospects, and problems;Schwierz;P. IEEE,2013

4. Carbon-based electronics;Avouris;Nat. Nanotechnol.,2007

5. The rise of graphene;Geim;Nat. Mater.,2007

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1. Perfect Spin Filtering, Giant Magnetoresistance, and Rectification Behavior Induced by V‐Doped Zigzag Graphene Nanoribbons;Advanced Quantum Technologies;2024-06-19

2. First-principles study on the structural, electronic, elastic, optical and thermodynamic properties of double antiperovskites X6BiSbN2 (X = Mg, Ca, Sr);Journal of Physics and Chemistry of Solids;2024-04

3. Regulation of negative differential resistance behavior of zigzag GeSe nanoribbon by the doping of N atoms and edge passivation;Ferroelectrics;2023-10-26

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