Apparatus for investigating metalorganic chemical vapor deposition-grown semiconductors with ultrahigh-vacuum based techniques
Author:
Publisher
AIP Publishing
Subject
Instrumentation
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1711148
Reference24 articles.
1. Atomic structure studies of (113)B GaAs surfaces grown by metalorganic vapor phase epitaxy
2. Example of a Compound Semiconductor Surface that Mimics Silicon: The InP(001)-(2×1) Reconstruction
3. Clarification of theGaP(001)(2×4)Ga-rich reconstruction by scanning tunneling microscopy andab initiotheory
4. Preparation of P-rich InP surfaces via MOCVD and surface characterization in UHV
5. Atomic surface structure of the phosphorous-terminated InP(001) grown by MOVPE
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