Atomic surface structure of the phosphorous-terminated InP(001) grown by MOVPE
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.60.R5117/fulltext
Reference13 articles.
1. The compositional and structural changes that accompany the thermal annealing of (100) surfaces of GaAs, InP and GaP in vacuum
2. Electronic and geometric structure of clean InP(001) and of the CaF2/InP(001) interface
3. k-resolved inverse photoemission of InP(100) surfaces
4. High-pressure low-temperature phase transition in a dopedpara-terphenyl crystal: A spectral-hole-burning study
5. Scanning-tunneling-microscopy study of InP(001) surfaces prepared by UHV decapping of metal-organic vapor-phase-epitaxy-grown samples
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1. Unraveling Electron Dynamics in p-type Indium Phosphide (100): A Time-Resolved Two-Photon Photoemission Study;Journal of the American Chemical Society;2024-03-19
2. Substrate Doping and Defect Influence on P-Rich InP(001):H Surface Properties;Surfaces;2024-01-12
3. (Photo-)electrochemical reactions on semiconductor surfaces, part B: III-V surfaces–atomic and electronic structure;Encyclopedia of Solid-Liquid Interfaces;2024
4. Buried InP/Airhole Photonic‐Crystal Surface‐Emitting Lasers;physica status solidi (a);2020-09-28
5. Influence of UDMHy on GaAs (0 0 1) surface reconstruction before and during growth of Ga(NAs) by MOVPE;Applied Surface Science;2018-11
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