Precursors for Si atomic layer epitaxy: Real time adsorption studies on Si(100)
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.108405
Reference9 articles.
1. Mechanisms and kinetics of Si atomic‐layer epitaxy on Si(001)2×1 from Si2H6
2. Molecular layer epitaxy of silicon
3. Atomic layer epitaxy of silicon by dichlorosilane studied with core level spectroscopy
4. Self-Limiting Adsorption of SiCl2H2and Its Application to the Layer-by-Layer Photochemical Process
5. Adsorption and desorption kinetics for SiH2Cl2 on Si(111) 7×7
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1. Surface chemistry of the preferred (111) and (220) crystal oriented microcrystalline Si films by radio-frequency plasma-enhanced chemical vapor deposition;physica status solidi (c);2011-07-19
2. Surface Chemistry of Preferentially (111)- and (220)-Crystal-Oriented Microcrystalline Silicon Films by Radio-Frequency Plasma-Enhanced Chemical Vapor Deposition;Japanese Journal of Applied Physics;2010-08-20
3. Theoretical Investigation of the Structure and Vibrational Spectrum of the Electronic Ground State X̃(1A‘) of HSiCl;The Journal of Physical Chemistry A;2002-04-02
4. SYNCHROTRON RADIATION PHOTOEMISSION AND INFRARED SPECTROSCOPY STUDY OF ADSORPTION AND DECOMPOSITION OF DICHLOROSILANE ON Si(100)(2 × 1);Surface Review and Letters;2002-04
5. Process requirements for continued scaling of CMOS—the need and prospects for atomic-level manipulation;IBM Journal of Research and Development;2002-03
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