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In-well pumping of InGaN/GaN vertical-external-cavity surface-emitting lasers

  • Published:2011-11-14 Issue:20 Volume:99 Page:201109
  • ISSN:0003-6951
  • Container-title:Applied Physics Letters
  • language:en
  • Short-container-title:Appl. Phys. Lett.

Author:

Wunderer Thomas,Northrup John E.,Yang Zhihong,Teepe Mark,Strittmatter André,Johnson Noble M.,Rotella Paul,Wraback Michael

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Cited by 26 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Improvement of Optoelectronic Characteristics of Deep-ultraviolet Laser Diode with an Optimal Thickness of Electron Blocking Layer and Waveguide Layer;2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS);2023-02-07

2. In-Well and Barrier Coupling Pump of Semiconductor Disk Laser;IEEE Photonics Journal;2022-10

3. InGaN-diode-pumped AlGaInP VECSEL with sub-kHz linewidth at 689 nm;Optics Express;2021-01-19

4. Vertical external cavity surface-emitting lasers with emitting wavelength of 1040-1200 nm grown by metal organic chemical vapor deposition;Semiconductor Lasers and Applications X;2020-10-10

5. Optomechanical lasers for inertial sensing;Journal of the Optical Society of America A;2020-08-12
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