InGaN-diode-pumped AlGaInP VECSEL with sub-kHz linewidth at 689 nm-Reference-Cited by-同舟云学术

InGaN-diode-pumped AlGaInP VECSEL with sub-kHz linewidth at 689 nm

Published:2021-01-19 Issue:3 Volume:29 Page:3258
ISSN:1094-4087
Container-title:Optics Express
language:en
Short-container-title:Opt. Express

Author:

Moriya Paulo H.^ORCID,Casula Riccardo^ORCID,Chappell George A.^ORCID,Parrotta Daniele C.,Ranta Sanna^ORCID,Kahle Hermann^ORCID,Guina Mircea^ORCID,Hastie Jennifer E.

Funder

Engineering and Physical Sciences Research Council

Publisher

The Optical Society

Subject

Atomic and Molecular Physics, and Optics

Reference45 articles.

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5. High-power (>0.5-W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM/sub 00/ beams

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