A phenomenological model of switching in metal‐thin insulator‐semiconductor‐semiconductor devices: A development of the analogy with the thyristor
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.342858
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1. Thin‐MIS‐Structure Si Negative‐Resistance Diode
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1. A thyristor model of switching in metal‐thin insulator‐semiconductor‐semiconductor devices: The influence of insulating layer and illumination;Journal of Applied Physics;1990-12-15
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