An isolated Al-poly Si-(p)Si-(n+)Si switching device-Reference-Cited by-同舟云学术

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An isolated Al-poly Si-(p)Si-(n+)Si switching device

Published:1986-07 Issue:7 Volume:29 Page:735-737
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Chang C.Y.,Wang Y.D.,Tzeng F.C.,Chen C.T.,Wang S.J.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference12 articles.

1. Bistable impedance states in MIS structures through controlled inversion

2. Silicon p−n insulator-metal (p-n-I-M) devices

3. Experimental studies of switching in metal semi-insulating n-p+ silicon devices

4. Theory of switching in polysilicon-n-p+ silicon structures

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Evaluation of hydrogen-sensitive switching device by capacitance-voltage method;Sensors and Actuators B: Chemical;1996-12

2. A novel silicon carbide based high-bidirectional switching device for high-voltage control applications;IEEE Transactions on Electron Devices;1995

3. Hydrogen-Sensitive Property of Switching Device with a Pd–Si Tunnel Metal Insulator Semiconductor Structure;Japanese Journal of Applied Physics;1994-11-15

4. Threshold switching transient in metal/a-Si:H/c-Si(p-n) (MASS) heterojunction device;Solid-State Electronics;1990-04

5. A phenomenological model of switching in metal‐thin insulator‐semiconductor‐semiconductor devices: A development of the analogy with the thyristor;Journal of Applied Physics;1989-03

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