A thyristor model of switching in metal‐thin insulator‐semiconductor‐semiconductor devices: The influence of insulating layer and illumination
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.346842
Reference27 articles.
1. Thin‐MIS‐Structure Si Negative‐Resistance Diode
2. Model for the switching voltage of miss devices based on an analogy with the thyristor
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4. Silicon p−n insulator-metal (p-n-I-M) devices
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