PLD-derived Ge 2 Sb 2 Te 5 phase-change films with extreme bending stability for flexible device applications-Reference-Cited by-同舟云学术

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PLD-derived Ge 2 Sb 2 Te 5 phase-change films with extreme bending stability for flexible device applications

Published:2020-04-20 Issue:16 Volume:116 Page:162102
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Zhou Jiaoyan¹

Affiliation:

1. Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics and Advanced Instrument (Ministry of Education), Department of Materials, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China

Funder

National Key R&D Program of China

National Natural Science Foundation of China

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/5.0001348

Reference27 articles.

1. Reversible Electrical Switching Phenomena in Disordered Structures

2. Breaking the Speed Limits of Phase-Change Memory

3. Who Wins the Nonvolatile Memory Race?

4. Phase-change materials for rewriteable data storage

5. A map for phase-change materials

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1. Resistance behavior of Sb7Se3 thin films based on flexible mica substrate;The Journal of Chemical Physics;2024-08-28

2. Highly flexible and temperature-tolerant phase change devices for dual-band camouflage;Applied Physics Reviews;2024-07-09

3. Flexible germanium monotelluride phase change films with ultra-high bending stability for wearable piezoresistive sensors;Journal of Alloys and Compounds;2023-12

4. Microstructure characterization, phase transition, and device application of phase-change memory materials;Science and Technology of Advanced Materials;2023-08-30

5. The Nanoscale Electrical Damage Mechanism of Ge₂Sb₂Te₅ Phase-Change Films Discovered by Conductive Atomic Force Microscopy;IEEE Electron Device Letters;2023-03

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