The Nanoscale Electrical Damage Mechanism of Ge₂Sb₂Te₅ Phase-Change Films Discovered by Conductive Atomic Force Microscopy-Reference-Cited by-同舟云学术

The Nanoscale Electrical Damage Mechanism of Ge₂Sb₂Te₅ Phase-Change Films Discovered by Conductive Atomic Force Microscopy

Published:2023-03 Issue:3 Volume:44 Page:488-491
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Xu Xionghu¹,Li Ming¹,Li Shubing¹,Cui Anyang¹,Deng Menghan¹^ORCID,Jiang Kai¹,Zhu Liangqing¹,Shang Liyan¹^ORCID,Chu Junhao¹,Hu Zhigao¹^ORCID

Affiliation:

1. Department of Physics, Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics and Advanced Instrument (Ministry of Education), School of Physics and Electronic Science, East China Normal University, Shanghai, China

Funder

National Natural Science Foundation of China

National Key Research and Development Program of China

Projects of Science and Technology Commission of Shanghai Municipality

Program for Professor of Special Appointment (Eastern Scholar) at Shanghai Institutions of Higher Learning

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/10053585/10018384.pdf?arnumber=10018384

Reference41 articles.

1. Mixed-Mode Electro-Optical Operation of Ge2Sb2Te5Nanoscale Crossbar Devices

2. The mechanism of threshold switching in amorphous alloys

3. Temperature and concentration dependent crystallization behavior of Ge2Sb2Te5phase change films: tungsten doping effects

4. Localized States in the Gap of Amorphous Semiconductors

5. The crystallization behavior of amorphous Ge2Sb2Te5films induced by a multi-pulsed nanosecond laser