Temperature and concentration dependent crystallization behavior of Ge2Sb2Te5phase change films: tungsten doping effects-Reference-Cited by-同舟云学术

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Temperature and concentration dependent crystallization behavior of Ge2Sb2Te5phase change films: tungsten doping effects

Published:2014-10-23 Issue:100 Volume:4 Page:57218-57222
ISSN:2046-2069
Container-title:RSC Adv.
language:en
Short-container-title:RSC Adv.

Author:

Guo Shuang,Hu Zhigao,Ji Xinglong,Huang Ting,Zhang Xiaolong,Wu Liangcai,Song Zhitang,Chu Junhao

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2014/RA/C4RA08790A

Reference26 articles.

1. Reversible Electrical Switching Phenomena in Disordered Structures

2. Rapid‐phase transitions of GeTe‐Sb2Te3pseudobinary amorphous thin films for an optical disk memory

3. Understanding the phase-change mechanism of rewritable optical media

4. Phase-change materials for rewriteable data storage

5. A map for phase-change materials

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1. Growth Mechanism of Ge2Sb2Te5 Thin Films by Atomic Layer Deposition Supercycles of GeTe and SbTe;Surfaces and Interfaces;2024-09

2. Highly flexible and temperature-tolerant phase change devices for dual-band camouflage;Applied Physics Reviews;2024-07-09

3. Octahedral to tetrahedral bonding transitions in the local structure of phase change optical media Ge2Sb2Se5xTe5−5x with Se doping;AIP Advances;2023-04-01

4. The Nanoscale Electrical Damage Mechanism of Ge₂Sb₂Te₅ Phase-Change Films Discovered by Conductive Atomic Force Microscopy;IEEE Electron Device Letters;2023-03

5. Fabrication of stable multi-level resistance states in a Nb-doped Ge₂Sb₂Te₅ device;Journal of Materials Chemistry C;2023

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