Interfacial chemistry and valence band offset between GaN and Al2O3 studied by X-ray photoelectron spectroscopy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4807736
Reference26 articles.
1. Mechanism of current leakage through metal/n-GaN interfaces
2. Current/voltage characteristic collapse in AlGaN/GaN heterostructure insulated gate field effect transistors at high drain bias
3. ZrO[sub 2] gate dielectrics produced by ultraviolet ozone oxidation for GaN and AlGaN∕GaN transistors
4. High-Performance Microwave Gate-Recessed AlGaN/AlN/GaN MOS-HEMT With 73% Power-Added Efficiency
5. Electronic states of oxidized GaN(0001) surfaces
Cited by 64 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. An Active and Robust Catalytic Architecture of NiCo/GaN Nanowires for Light‐Driven Hydrogen Production from Methanol;Small;2024-01-14
2. An unprecedented photocatalytic architecture for benchmarking hydrogen production from methanol;2023-07-11
3. Modulating the bactericidal activity and corrosion resistance of Al2O3 porous ceramics through Cu and Fe co-introduction for membrane support application;Materials Today Communications;2023-06
4. Evolution of Stabilized 1T‐MoS2 by Atomic‐Interface Engineering of 2H‐MoS2/Fe−Nx towards Enhanced Sodium Ion Storage;Angewandte Chemie International Edition;2023-02-20
5. Evolution of Stabilized 1T‐MoS2 by Atomic‐Interface Engineering of 2H‐MoS2/Fe−Nx towards Enhanced Sodium Ion Storage;Angewandte Chemie;2023-02-20
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3