Dopant accumulation during substitutional–interstitial diffusion in semiconductors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.118290
Reference12 articles.
1. Secondary ion mass spectrometry and electrical characterization of Zn diffusion inn‐type InP
2. Zn diffusion in InP: Effect of substrate dopant concentration
3. Evaluation of Surface Zn Concentration in Zn Diffusion into InP
4. Rapid zinc diffusion in gallium arsenide
5. Diffusion with Interstitial-Substitutional Equilibrium. Zinc in GaAs
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