Mechanism and kinetics of near-surface dopant pile-up during post-implant annealing
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4714556
Reference36 articles.
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3. Dependences of Short-Channel Effect on Doping Profiles for Nanoscale Metal–Oxide–Semiconductor Field-Effect Transistor
4. Control of Defect Concentrations within a Semiconductor through Adsorption
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