Early growth of silicon on sapphire. II. Models
Author:
Affiliation:
1. RCA Laboratories, Princeton, New Jersey 08540
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Reference12 articles.
1. M. S. Abrahams, C. J. Buiocchi, R. T. Smith, J. F. Corboy, Jr., J. Blanc, and G. W. Cullen, preceding paper, J. Appl. Phys. 47, xxx (1976).JAPIAU0021-8979
2. P. F. Linnington, Ph.D. thesis (Cambridge University, 1974 (unpublished).
3. For example, K. L. Chopra, Thin Film Phenomena (McGraw‐Hill, New York, 1969), Chap. IV.
4. It is possible from the data and equations of Henderson and Helm [Surf. Sci. 30, 310 (1972)] to roughly estimate a value of (Dts)1/2≅40 Å for Si deposition from SiH4 on silicon substrates at 1000 °C. Our own very indirect estimates for growth on sapphire prove to be not very different.SUSCAS0039-6028
5. J. F. Corboy, Jr. (private communication).
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