Self-formed silicon quantum wires on ultrasmooth sapphire substrates-Reference-Cited by-同舟云学术

Self-formed silicon quantum wires on ultrasmooth sapphire substrates

Published:1997-09-08 Issue:10 Volume:71 Page:1409-1411
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Yanagiya Shun-ichi,Kamimura Shunsuke,Fujii Masanori,Ishida Makoto,Moriyasu Yoshitaka,Matsui Masahiro,Yoshimoto Mamoru,Ohnishi Tsuyoshi,Yoshida Kenji,Sasaki Kenji,Koinuma Hideomi

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.119908

Reference21 articles.

1. Coulomb blockade in the inversion layer of a Si metal‐oxide‐semiconductor field‐effect transistor with a dual‐gate structure

2. Coulomb blockade oscillations at room temperature in a Si quantum wire metal‐oxide‐semiconductor field‐effect transistor fabricated by anisotropic etching on a silicon‐on‐insulator substrate

3. Stimulated emission in semiconductor quantum wire heterostructures

4. Direct formation of quantum‐sized dots from uniform coherent islands of InGaAs on GaAs surfaces

5. Conductance Oscillations Periodic in the Density of a One-Dimensional Electron Gas

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