High performance of AlGaN deep-ultraviolet light emitting diodes due to improved vertical carrier transport by delta-accelerating quantum barriers-Reference-Cited by-同舟云学术

High performance of AlGaN deep-ultraviolet light emitting diodes due to improved vertical carrier transport by delta-accelerating quantum barriers

Published:2019-04-29 Issue:17 Volume:114 Page:172105
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Lang J.¹^ORCID,Xu F. J.¹^ORCID,Ge W. K.¹,Liu B. Y.¹,Zhang N.¹,Sun Y. H.¹,Wang M. X.¹,Xie N.¹,Fang X. Z.¹,Kang X. N.¹,Qin Z. X.¹,Yang X. L.¹^ORCID,Wang X. Q.¹²^ORCID,Shen B.¹²

Affiliation:

1. State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China

2. Collaborative Innovation Center of Quantum Matter, Beijing 100871, China

Funder

National Key R&D Program of China

National Natural Science Foundation of China

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5093160

Reference19 articles.

1. M. Kneissl , III-Nitride Ultraviolet Emitters ( Springer, 2016), p. 1.

2. Deep-ultraviolet light-emitting diodes with external quantum efficiency higher than 20% at 275 nm achieved by improving light-extraction efficiency

3. Recent progress of high efficiency white LEDs

4. 85% internal quantum efficiency of 280-nm AlGaN multiple quantum wells by defect engineering

5. AlGaN photonics: recent advances in materials and ultraviolet devices

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