Defect-free single-crystal Ge island arrays on insulator by rapid-melting-growth combined with seed-positioning technique
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3231925
Reference26 articles.
1. High hole mobility in strained Ge channel of modulation-doped p-Si0.5Ge0.5/Ge/Si1−xGex heterostructure
2. Strained Si, SiGe, and Ge on-insulator: review of wafer bonding fabrication techniques
3. Ge on Si p-i-n photodiodes operating at 10Gbit∕s
4. Growth of highly tensile-strained Ge on relaxed InxGa1−xAs by metal-organic chemical vapor deposition
5. Characterization of 7-nm-thick strained Ge-on-insulator layer fabricated by Ge-condensation technique
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1. Investigation on electrical characteristics of TFTs fabricated with germanium films crystallized by atmospheric-pressure micro thermal plasma jet irradiation;Japanese Journal of Applied Physics;2022-02-09
2. High-Performance Germanium Thin-Film Transistors With Single-Crystal-Like Channel via Continuous-Wave Laser Crystallization;IEEE Electron Device Letters;2018-12
3. High-Performance Recessed-Channel Germanium Thin-Film Transistors via Excimer Laser Crystallization;IEEE Electron Device Letters;2018-03
4. Single crystal formation in micro/nano-confined domains by melt-mediated crystallization without seeds;Journal of Physics D: Applied Physics;2015-05-08
5. Giant-Lateral-Growth of SiGe Stripes on Insulating-Substrate by Self-Organized-Seeding and Rapid-Melting-Growth in Solid-Liquid Coexisting Region;ECS Solid State Letters;2014-03-19
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