Distribution of SiO2precipitates in large, oxygen rich Czochralski‐grown silicon single crystals after annealing at 750 °C
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.359039
Reference28 articles.
1. Interlaboratory Determination of the Calibration Factor for the Measurement of the Interstitial Oxygen Content of Silicon by Infrared Absorption
2. Annealed Czochralski grown silicon crystals: A new material for the monochromatisation of synchrotron radiation and X-rays above 60 keV
3. Test of annealed Czochralski grown silicon crystals as X-ray diffraction elements with 145 keV synchrotron radiation
4. Experimental tests of the statistical dynamical theory
5. An infrared and neutron scattering analysis of the precipitation of oxygen in dislocation-free silicon
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3. Dynamical theoretical model of the high-resolution double-crystal x-ray diffractometry of imperfect single crystals with microdefects;Physical Review B;2008-12-30
4. X-ray diffraction study of defect distribution in Czochralski grown silicon highly doped by As;Journal of Physics D: Applied Physics;2005-05-06
5. Small angle X-ray scattering study of oxygen precipitation in silicon;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2003-01
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